pH sensor based on an AlGaN/GaN HEMT structure
نویسندگان
چکیده
منابع مشابه
Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure
The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN s...
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ژورنال
عنوان ژورنال: Procedia Engineering
سال: 2012
ISSN: 1877-7058
DOI: 10.1016/j.proeng.2011.12.507